Simulation of Nonpolar p-GaN/i-In_𝑥Ga_1−𝑥N/n-GaN Solar Cells

Table 1

The simulation parameters for In_xGa_1−x N materials at 300 K [1].

Parameters	Expression	References
Energy bandgap (eV)	𝐸𝑔(In𝑥Ga1−𝑥N)=0.7𝑥+3.4(1−𝑥)−1.43𝑥(1−𝑥)	[15]
Electron mobility (cm^2 eV^−1 s^−1)	Linear fitting: 170 at 𝑃=4×10^18 cm^−3 and 100 at 𝑃=1×10^19 cm^−3	[16, 17]
Hole mobility (cm^2 eV^−1 s^−1)	Linear fitting: 22 at 𝑛=3×10^17 cm^−3 and 13 at 𝑛=1×10^18 cm^−3	[16, 18]
Relative permittivity 𝜀	𝜀(In𝑥Ga1−𝑥N)=𝑥⋅𝜀InN+(1−𝑥)⋅𝜀GaN	[19, 20]
Electron affinity 𝜒 (eV)	𝜒GaN+0.7⋅(3.4−𝐸𝑔)	[19, 21]
Effective density of states in the conduction band Nc (cm^−3)	N𝑐(InxGa1−x N) = xNc ^InN+ (1 − x)Nc ^GaN	[19]
Effective density of states in the valence band Nv (cm^−3)	N𝑣(InxGa1−x N) = xNv ^InN+ (1 − x)Nv ^GaN	[19]
Absorption coefficient 𝛼 (cm^−1)	𝛼(𝜆)=2.2×10^5(1.24/𝜆)−𝐸g	[19]
Carrier lifetime 𝜏 (ns)	1 ns	[22]
Surface recombination velocities Sp0, SpL, Sn0, SnL (cms^−1)	1000	[23]