International Journal of Photoenergy / 2012 / Article / Fig 4

Research Article

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Figure 4

Recombination rate and electric field distribution of The a-SiGe:H solar cell device for different acceptor concentrations in p-layer.
946024.fig.004a
(a)
946024.fig.004b
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