Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Table 1

The set of input parameters used in the simulation.

Layer	p-layer	i-layer	n-layer
Thickness [nm]	50	800	50
Doping concentration [/cm^3]	5×10^18	1×10^14	3×10^18
Mobility gap [eV]	1.8	1.5	1.8
Electron mobility [cm^2/Vs]	10	20	20
Hole mobility [cm^2/Vs]	1	2	2
Effective DOS in CB [/cm^3]	2.5×10^20	1×10^20	2.5×10^20
Effective DOS in VB [/cm^3]	2.5×10^20	1×10^20	2.5×10^20