International Journal of Photoenergy / 2012 / Article / Tab 1

Research Article

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Table 1

The set of input parameters used in the simulation.


Thickness [nm]5080050
Doping concentration [/cm3]
Mobility gap [eV]
Electron mobility [cm2/Vs]102020
Hole mobility [cm2/Vs]122
Effective DOS in CB [/cm3]
Effective DOS in VB [/cm3]

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