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International Journal of Photoenergy
Volume 2013, Article ID 121875, 6 pages
Research Article

Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

1Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
2Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
3Department of Materials Science and Engineering, DaYeh University, ChungHua 51591, Taiwan

Received 14 June 2013; Accepted 9 August 2013

Academic Editor: Gaetano Di Marco

Copyright © 2013 Yun-Shao Cho et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Influences of hydrogen content in intrinsic hydrogenated amorphous silicon (i-a-Si:H) on performances of heterojunction (HJ) solar cells are investigated. The simulation result shows that in the range of 0–18% of the i-layer hydrogen content, solar cells with higher i-layer hydrogen content can have higher degree of dangling bond passivation on single crystalline silicon (c-Si) surface. In addition, the experimental result shows that HJ solar cells with a low hydrogen content have a poor a-Si:H/c-Si interface. The deteriorate interface is assumed to be attributed to (i) voids created by insufficiently passivated c-Si surface dangling bonds, (ii) voids formed by SiH2 clusters, and (iii) Si particles caused by gas phase particle formation in silane plasma. The proposed assumption is well supported and explained from the plasma point of view using optical emission spectroscopy.