Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2013, Article ID 121875, 6 pages
http://dx.doi.org/10.1155/2013/121875
Research Article

Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

1Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
2Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
3Department of Materials Science and Engineering, DaYeh University, ChungHua 51591, Taiwan

Received 14 June 2013; Accepted 9 August 2013

Academic Editor: Gaetano Di Marco

Copyright © 2013 Yun-Shao Cho et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Y. Tsunomura, Y. Yoshimine, M. Taguchi et al., “Twenty-two percent efficiency HIT solar cell,” Solar Energy Materials and Solar Cells, vol. 93, no. 6-7, pp. 670–673, 2009. View at Publisher · View at Google Scholar · View at Scopus
  2. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, “Development status of high-efficiency HIT solar cells,” Solar Energy Materials and Solar Cells, vol. 95, no. 1, pp. 18–21, 2011. View at Publisher · View at Google Scholar · View at Scopus
  3. T. Kinoshita, D. Fujishima, A. Yano et al., “The approaches for high efficiency HITTM solar cell with very thin (<100 µm) silicon wafer over 23%,” in Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, pp. 871–874, Hamburg, Germany, 2011.
  4. K. V. Maydell, H. Windgassen, W. A. Nositschka et al., “Basic electronic properties and technology of TCO/a-Si:H(n)/c-Si(p) heterostructure solar cells: a german network project,” in Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, p. 822, Barcelona, Spain, 2005.
  5. H. Fujiwara and M. Kondo, “Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells,” Journal of Applied Physics, vol. 101, Article ID 054516, 2007. View at Google Scholar
  6. T. H. Wang, E. Iwaniczko, M. R. Page et al., “Effective interfaces in silicon heterojunction solar cells,” in Proceedings of the 31st IEEE Photovoltaic Specialists Conference and Exhibition, pp. 955–958, Orlando, Fla, USA, January 2005. View at Scopus
  7. V. A. Dao, N. V. Duy, J. Heo et al., “Hydrogenated amorphous silicon layer formation by inductively coupled plasma chemical vapor deposition and its application for surface passivation of p-type crystalline silicon,” Japanese Journal of Applied Physics, vol. 48, no. 6, Article ID 066509, 2009. View at Publisher · View at Google Scholar · View at Scopus
  8. N. Dwivedi, S. Kumar, A. Bisht, K. Patel, and S. Sudhakar, “Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve 27% efficiency,” Solar Energy, vol. 88, pp. 31–41, 2013. View at Google Scholar
  9. N. Hernández-Como, A. Morales-Acevedo, and Y. Matsumoto, “I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD,” Solar Energy Materials and Solar Cells, vol. 95, no. 8, pp. 1996–2000, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. A. Matsuda, M. Takai, T. Nishimoto, and M. Kondo, “Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate,” Solar Energy Materials and Solar Cells, vol. 78, no. 1–4, pp. 3–26, 2003. View at Publisher · View at Google Scholar · View at Scopus
  11. W. M. M. Kessels, R. J. Severens, A. H. M. Smets et al., “Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma,” Journal of Applied Physics, vol. 89, no. 4, pp. 2404–2413, 2001. View at Publisher · View at Google Scholar · View at Scopus
  12. J. Gea, Z. P. Linga, J. Wonga, T. Muellera, and A. G. Aberlea, “Optimisation of intrinsic a-Si:H passivation layers in crystalline-amorphous silicon heterojunction solar cells,” Energy Procedia, vol. 15, pp. 107–117, 2012. View at Google Scholar
  13. L. Zhao, H. L. Li, C. L. Zhou, H. W. Diao, and W. J. Wang, “Optimized resistivity of p-type Si substrate for HIT solar cell with Al back surface field by computer simulation,” Solar Energy, vol. 83, no. 6, pp. 812–816, 2009. View at Publisher · View at Google Scholar · View at Scopus
  14. A. Datta, M. Rahmouni, M. Nath, R. Boubekri, P. R. Cabarrocas, and P. Chatterjee, “Insights gained from computer modeling of heterojunction with instrinsic thin layer “hIT” solar cells,” Solar Energy Materials and Solar Cells, vol. 94, no. 9, pp. 1457–1462, 2010. View at Publisher · View at Google Scholar · View at Scopus
  15. L. Zhao, C. L. Zhou, H. L. Li, H. W. Diao, and W. J. Wang, “Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation,” Solar Energy Materials and Solar Cells, vol. 92, no. 6, pp. 673–681, 2008. View at Publisher · View at Google Scholar · View at Scopus
  16. V. A. Dao, J. Heo, H. Choi et al., “Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell,” Solar Energy, vol. 84, no. 5, pp. 777–783, 2010. View at Publisher · View at Google Scholar · View at Scopus
  17. J. Gopea, S. Kumar, S. Sudhakar, K. Lodhi, C. M. S. Rauthana, and P. C. Srivastava, “Influence of argon dilution on the growth of amorphous to ultra nanocrystalline silicon films using VHF PECVD process,” Journal of Alloys and Compounds, vol. 577, pp. 710–716, 2013. View at Google Scholar
  18. A. A. Howling, B. Strahm, P. Colsters, L. Sansonnens, and C. Hollenstein, “Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy,” Plasma Sources Science and Technology, vol. 16, no. 4, pp. 679–696, 2007. View at Publisher · View at Google Scholar · View at Scopus
  19. A. A. Howling, B. Strahm, and C. Hollenstein, “Non-intrusive plasma diagnostics for the deposition of large area thin film silicon,” Thin Solid Films, vol. 517, no. 23, pp. 6218–6224, 2009. View at Publisher · View at Google Scholar · View at Scopus
  20. N. Hernández-Como and A. Morales-Acevedo, “Simulation of hetero-junction silicon solar cells with AMPS-1D,” Solar Energy Materials and Solar Cells, vol. 94, no. 1, pp. 62–67, 2010. View at Publisher · View at Google Scholar · View at Scopus
  21. M. Schaper, J. Schmidt, H. Plagwitz, and R. Brendel, “20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation,” Progress in Photovoltaics: Research and Applications, vol. 13, no. 5, pp. 381–386, 2005. View at Publisher · View at Google Scholar · View at Scopus
  22. L. Zhao, H. L. Li, C. L. Zhou, H. W. Diao, and W. J. Wang, “Optimized resistivity of p-type Si substrate for HIT solar cell with Al back surface field by computer simulation,” Solar Energy, vol. 83, no. 6, pp. 812–816, 2009. View at Publisher · View at Google Scholar · View at Scopus
  23. D.-S. Wuu, S.-Y. Lien, H.-Y. Mao et al., “Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition,” Thin Solid Films, vol. 498, no. 1-2, pp. 9–13, 2006. View at Publisher · View at Google Scholar · View at Scopus
  24. J. C. Knights, “Characterization of plasma-deposited amorphous Si: H thin films,” Japanese Journal of Applied Physics, vol. 18, pp. 101–108, 1979. View at Google Scholar
  25. F. J. Kampas, “Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering,” Journal of Applied Physics, vol. 53, no. 9, pp. 6408–6412, 1982. View at Publisher · View at Google Scholar · View at Scopus
  26. H.-Y. Kim, K.-Y. Lee, and J.-Y. Lee, “The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition,” Thin Solid Films, vol. 302, no. 1-2, pp. 17–24, 1997. View at Google Scholar · View at Scopus
  27. M. Jeon, S. Yoshiba, and K. Kamisako, “Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique,” Current Applied Physics, vol. 10, no. 2, pp. S237–S240, 2010. View at Publisher · View at Google Scholar · View at Scopus
  28. A. Matsuda, “Control of plasma and surface conditions for low defect density a-Si:H at high growth rates,” in Proceedings of the 25th IEEE Photovoltaic Specialists Conference, pp. 1029–1034, May 1996. View at Scopus
  29. W. M. M. Kessels, J. P. M. Hoefnagels, P. J. van den Oever, Y. Barrell, and M. C. M. van de Sanden, “Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth,” Surface Science, vol. 547, no. 3, pp. L865–L870, 2003. View at Publisher · View at Google Scholar · View at Scopus