|
| Device parameters | Value |
|
| Device area (cm2) | 1 |
| Front surface | Texture |
| Solar cell structure | n-Si/i-Si/c-Si/BSF |
| Exterior rear reflectance (%) | 90 |
| Light source | One sun (AM 1.5, 100 mW/cm2) |
|
| Layer parameter | a-Si:H(n) | a-Si:H(i) | c-Si(p) | Al-BSF |
|
| Thickness (μm) | 0.01 | 0.005 | 250 | 5 |
| Band gap (eV) | 1.92 | 1.7 | 1.12 | 1.12 |
| Dielectric constant | 11.7 | 11.7 | 11.7 | 11.7 |
| Electron affinity (eV) | 3.9 | 3.9 | 4.05 | 4.05 |
| Electron mobility (cm2/V−1s−1) | 20 | 20 | 1417 | 200 |
| Hole mobility (cm2/V−1s−1) | 10 | 10 | 470 | 80 |
| Doping concentration (cm−3) | | | | |
| Hydrogen content (%) | — | 0–18 | — | — |
|