Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

Table 1

TCAD input parameters for n-Si/i-Si/c-Si HJ solar cells with various hydrogen content of i-layer.

Device parameters	Value
Device area (cm^2)	1
Front surface	Texture
Solar cell structure	n-Si/i-Si/c-Si/BSF
Exterior rear reflectance (%)	90
Light source	One sun (AM 1.5, 100 mW/cm^2)
Layer parameter	a-Si:H(n)	a-Si:H(i)	c-Si(p)	Al-BSF
Thickness (μm)	0.01	0.005	250	5
Band gap (eV)	1.92	1.7	1.12	1.12
Dielectric constant	11.7	11.7	11.7	11.7
Electron affinity (eV)	3.9	3.9	4.05	4.05
Electron mobility (cm^2/V^−1s^−1)	20	20	1417	200
Hole mobility (cm^2/V^−1s^−1)	10	10	470	80
Doping concentration (cm^−3)	1×10^19	1×10^19	1×10^16	1×10^19
Hydrogen content (%)	—	0–18	—	—