Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

<table>Extrapolated (TF) and reader circuit (RC) <svg height="15.5125" id="M32" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 32.1875 15.5125" width="32.1875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.363)"><path d="M600 0h-557v24l268 633l28 8l261 -641v-24zM497 50l-194 489l-196 -489h390z" id="x394"></path></g><g transform="matrix(.017,-0,0,-.017,10.959,11.363)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,23.575,15.45)"><path d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22
t37 -4h417q23 0 33.5 5t25.5 21h23z" id="x1D447"></path></g>
</svg> during 200 kV X-ray irradiation with zero and +5 V gate bias.</table>

International Journal of Photoenergy

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Figure 3