Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

<table><svg height="15.65" id="M67" style="vertical-align:-3.39069pt" version="1.1" viewbox="0 0 36.0625 15.65" width="36.0625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path d="M600 0h-557v24l268 633l28 8l261 -641v-24zM497 50l-194 489l-196 -489h390z" id="x394"></path></g><g transform="matrix(.017,-0,0,-.017,10.959,11.362)"><path d="M857 650l-6 -28q-44 -4 -61.5 -16.5t-29.5 -48.5q-11 -32 -37 -166l-78 -399h-29l-351 537h-4l-56 -276q-24 -120 -24 -164q0 -35 17.5 -46t75.5 -15l-6 -28h-245l7 28q41 2 62 14t31 44q10 30 41 171l53 245q8 44 6.5 60.5t-14.5 33.5q-10 15 -27 19.5t-64 6.5l6 28h153
l350 -516h5l48 257q25 131 25 171q0 34 -17.5 45t-77.5 15l7 28h240z" id="x1D441"></path></g>
<g transform="matrix(.012,-0,0,-.012,25.812,15.45)"><path d="M257 449q92 0 154 -65t62 -158q0 -112 -67 -175t-150 -63q-98 0 -158.5 66.5t-60.5 154.5q0 59 21 106.5t54.5 75.5t71 43t73.5 15zM244 416q-48 0 -81 -47t-33 -128q0 -96 38 -158t99 -62q51 0 82 43.5t31 139.5q0 91 -36 151.5t-100 60.5z" id="x6F"></path></g><g transform="matrix(.012,-0,0,-.012,31.762,15.45)"><path d="M298 36l-68 -35q-25 -13 -42 -13q-98 0 -98 119v290h-69l-4 11l28 29h45v72l65 67l14 -2v-137h113q8 -8 6 -21t-12 -19h-107v-256q0 -96 59 -96q29 0 61 17z" id="x74"></path></g>
</svg> during 200 kV and 280 kV X-ray as well as gamma-ray irradiation with zero gate bias.</table>

International Journal of Photoenergy

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Figure 8