[Retracted] Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology

<table>Density of ion energy (per unit of depth), which was submitted to atoms displaced in the layers of the flash cell (expressed per incident ion) for (a) 10 keV protons, (b) 10 keV <svg height="7.9499998" id="M5" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 9.7749996 7.9499998" width="9.7749996" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M545 106q-67 -118 -134 -118q-24 0 -40 37.5t-30 129.5h-2q-47 -72 -103 -119.5t-108 -47.5q-47 0 -76 45.5t-29 119.5q0 113 85 204t174 91q47 0 70 -33.5t43 -119.5h3q32 47 80 140l55 13l10 -9q-47 -80 -138 -201q17 -99 27.5 -136t22.5 -37q23 0 69 61zM333 204
q-14 98 -31 149.5t-50 51.5q-49 0 -94 -70t-45 -164q0 -55 15.5 -86t40.5 -31q70 0 164 150z" id="x1D6FC"></path></g>
</svg> particles, (c) 100 keV ions of C, and (d) 100 keV ions of Fe.</table>

International Journal of Photoenergy

fig7

Figure 7

Figure 7: [Retracted] Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology 