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International Journal of Photoenergy
Volume 2013, Article ID 170269, 5 pages
Research Article

Radiation Damage in Electronic Memory Devices

1State University of Novi Pazar, 36300 Novi Pazar, Serbia
2Faculty of Electronic Engineering, University of Niš, 18000 Niš, Serbia
3Faculty of Electrical Engineering, University of Belgrade, 11120 Belgrade, Serbia

Received 10 April 2013; Accepted 25 May 2013

Academic Editor: Predrag Osmokrovic

Copyright © 2013 Irfan Fetahović et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.