International Journal of Photoenergy / 2013 / Article / Fig 4

Research Article

Radiation Damage in Electronic Memory Devices

Figure 4

The simulation of 30 keV alpha particles passing through 0.5 μm thick layer of SiO2 (10 events). (a) Trajectory of alpha particles in plane. (b) The ratio of specific ionization (linear transfer of energy) of incident alpha particles and displaced Si and O atoms along the oxide depth.
170269.fig.004a
(a)
170269.fig.004b
(b)

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