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International Journal of Photoenergy
Volume 2013, Article ID 183626, 5 pages
Research Article

Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

1Institute of Microelectronics & Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan
2College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
3College of Science, China University of Petroleum (East China), Qingdao, Shandong 266555, China

Received 19 September 2013; Accepted 2 October 2013

Academic Editor: Teen-Hang Meen

Copyright © 2013 Ching-In Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.