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International Journal of Photoenergy
Volume 2013, Article ID 245195, 4 pages
Research Article

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

1Department of Mechanical Engineering, Kun Shan University, Tainan 71003, Taiwan
2Metal Industries Research & Development Center, Kaohsiung 81160, Taiwan
3Taiwan Cement Corporation, Taipei 10448, Taiwan

Received 24 December 2012; Revised 27 March 2013; Accepted 29 March 2013

Academic Editor: Ching-Song Jwo

Copyright © 2013 Hsiao-Yeh Chu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process.