Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
Figure 6
Electron lifetime of the UMG-Si wafer processed with two-step gettering. The first step of the temperature profile was fixed to 850°C and 50 min, and during the second step (a) the temperature and (b) the time were varied. The highest electron lifetime was obtained at 600°C for 420 min.
