Research Article

The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer

Figure 1

External quantum efficiency (EQE) of a-Si1−xGex:H single-junction cells with different reverse biases. The bias voltage was changed from 0 to −1.5 V.
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