The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer : Figure 1

Figure 1: External quantum efficiency (EQE) of a-Si_1−xGe_x:H single-junction cells with different reverse biases. The bias voltage was changed from 0 to −1.5 V.