The Effect of Bandgap Graded Absorber on the Performance of a-Si_1–xGe_x:H Single-Junction Cells with μc-SiO_x:H N-Type Layer

Table 1

The reverse saturation current (𝐽₀) and the difference of current densities (Δ𝐽) measured with bias voltages of 0 and −0.5 V in EQE as a function of the p/i grading width.

𝑝/𝑖 grading width (nm)	0	20	70
Δ𝐽 (𝐽EQE(−0.5V)−𝐽EQE(0V)) (mA/cm^2)	1.07	1.44	1.40
𝐽0 (A)	2.8×10^−8	1.3×10^−9	2.9×10^−9