Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2013 (2013), Article ID 372869, 9 pages
Research Article

Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

1Institute of Manufacturing Technology and Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
2Institute of Physics, Academia Sinica, Taipei 115, Taiwan

Received 20 September 2013; Accepted 18 November 2013

Academic Editor: Teen-Hang Meen

Copyright © 2013 Chung-Hua Chao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper describes a fabrication and characterization of ultraviolet (UV) photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002) thin film. Plasma enhanced chemical vapor deposition (PECVD) system was employed to deposit ZnO (0002) thin films onto silicon substrates, and radio-frequency (RF) magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at in two different ambients (argon and nitrogen) to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), photoluminescence (PL), UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H5)2] to carbon dioxide (CO2) and then combined with Pt electrode annealed at in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.