The Effect of Annealing Temperature and KCN Etching on the Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells Using Nanoparticles
Figure 2
XRD pattern of CIGS/Mo without (a) and with annealing at temperatures of 500 (b), 520 (c), 540 (d), and 560°C (e) for 30 min under a selenium vapor ambience. The inset shows the -axis magnified peaks from 24° to 30°. The arrow is the position of Cu(In,Ga)S2 (112) [16].
