International Journal of Photoenergy / 2013 / Article / Fig 2

Research Article

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Figure 2

SEM images of TiO2 thin films at different growth temperatures: (a) 200°C, (b) 300°C, (c) 400°C, and (d) 500°C.
431614.fig.002a
(a)
431614.fig.002b
(b)
431614.fig.002c
(c)
431614.fig.002d
(d)

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