International Journal of Photoenergy / 2013 / Article / Fig 3

Research Article

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Figure 3

ALD TiO2 growth rate at temperature 200°C, 300°C, 400°C, and 500°C is 0.066 nm per cycle due to self-limiting growth. Inset is the cross-section SEM image.
431614.fig.003

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