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International Journal of Photoenergy
Volume 2013, Article ID 436910, 4 pages
Research Article

Picosecond Photovoltaic Response in Tilted Lanthanum Doped Manganite Films

1College of Science, China University of Petroleum, Beijing 102249, China
2Department of Physics, The Chinese University of Hong Kong, Hong Kong

Received 24 January 2013; Revised 7 August 2013; Accepted 9 September 2013

Academic Editor: Bhushan Sopori

Copyright © 2013 Zhiqing Lu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Anisotropic picosecond photovoltaic responses were observed in lanthanum doped manganite ( and 0.4) thin films, which were deposited on miscut LaSrAlO4 substrates under ultraviolet pulsed laser irradiation without external bias. The 10%–90% rise time and the full width at half maximum of La0.67Ca0.33MnO3 were 470 and 585 ps, respectively, and those of La0.4Ca0.6MnO3 were 220 and 515 ps. The photovoltage sensitivities of La0.67Ca0.33MnO3 and La0.4Ca0.6MnO3, which are sensitive to the concentrations of lanthanum of the samples, are 0.28 V/mJ and 3.47 V/mJ, respectively. The photosensitivity in the films deposited on MgO is higher than that in those deposited on LaSrAlO4 substrates, for it has a big lattice mismatch. These results should open a route for the application of lanthanum doped manganite as an ultrafast photodetector material.