Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

Table 1

Current density-voltage characteristics of the GaAs single-junction solar cells with various depths of the nano-hole arrays.

Sample	𝑉oc (V)	𝐽sc (mA/cm^2)	FF (%)	Eff. (%)
Planar surface	0.994	13.622	77.81	10.53
16 nm depth	0.996	14.605	76.55	11.14
48 nm depth	0.995	15.044	75.87	11.36
64 nm depth	1.009	15.206	75.39	11.57
95 nm depth	0.973	15.373	72.52	10.85