Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

Table 1

Material parameters used in simulation.

Parameter	n-SnO2	n-Zn2SnO4	n-CdS	p-CdTe	ZnTe/As2Te3/Sb2Te3/Cu2Te	Comments and references
Thickness (μm)	0.1	0.2	0.06	0.1–5.0	0.2	Theory and estimations
Dielectric constant, ɛ/ɛ 0	9.0	9.0	10.0	9.4	14/20/55/10	As discussed elsewhere [3, 12, 16, 20, 21]
Electron mobility, μe (cm^2/Vs)	100	32	100	320	70/500/1094/500	As discussed elsewhere [12, 16, 18, 21, 22]
Hole mobility, μp (cm^2/Vs)	25	03	25	40	50/210/320/100	As discussed elsewhere [13, 16, 18, 21, 22]
Electron and hole concentration,; n, p (cm^−3)	10^17	10^19	10^17	5×10^15	10^21 (Cu2Te)/7.5 × 10^19 (Others)	As discussed elsewhere [13, 16, 19, 21, 23]
Bandgap, Eg (eV)	3.6	3.35	2.42	1.45	2.25/0.6/0.3/1.18	As discussed elsewhere [10, 13, 16, 22, 23]
Density of states at conduction; band, NC (cm^−3)	2.2×10^18	2.0×10^18	2.2×10^18	8.0×10^17	7.8×10^17	As discussed elsewhere [16, 19, 21, 23, 24]
Density of states at valence band, NV (cm^−3)	1.8×10^19	1.5×10^19	1.8×10^19	1.8×10^19	1.6×10^19	As discussed elsewhere [16, 19, 21, 23, 24]
Electron affinity, χ (eV)	4.50	4.50	4.50	4.28	3.65/4/4.15/4.20	As discussed elsewhere [16, 18, 19, 21–24]