Research Article
Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
Figure 2
SEM images of CZTS thin films deposited with target powers Cu : SnS : ZnS: 15 : 30 : 80 W and annealed at 500°C (a) H2S + N2 gas and (b) sulfur vapor.