International Journal of Photoenergy / 2013 / Article / Fig 6

Research Article

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Figure 6

(a) The Si 2p XPS spectra of the aluminum oxide film sputtered at 1000 W RF power as-deposited and after 30 min of annealing at 500°C in N2 ambient which were detected at the etch time of 780 s. (b) Si 2p core-level spectrum fitted by using a synthetic peak model for the aluminum oxide film sputtered at 1000 W and after postannealing.
792357.fig.006

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