RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers
Figure 6
(a) The Si 2p XPS spectra of the aluminum oxide film sputtered at 1000 W RF power as-deposited and after 30 min of annealing at 500°C in N2 ambient which were detected at the etch time of 780 s. (b) Si 2p core-level spectrum fitted by using a synthetic peak model for the aluminum oxide film sputtered at 1000 W and after postannealing.
