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International Journal of Photoenergy
Volume 2013, Article ID 908786, 6 pages
http://dx.doi.org/10.1155/2013/908786
Review Article

Reduction of Oxygen Impurity in Multicrystalline Silicon Production

Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Received 7 December 2012; Accepted 17 January 2013

Academic Editor: Bhushan Sopori

Copyright © 2013 Bing Gao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Bing Gao, Satoshi Nakano, and Koichi Kakimoto, “Reduction of Oxygen Impurity in Multicrystalline Silicon Production,” International Journal of Photoenergy, vol. 2013, Article ID 908786, 6 pages, 2013. https://doi.org/10.1155/2013/908786.