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International Journal of Photoenergy
Volume 2013, Article ID 951303, 6 pages
Research Article

Evaluation of a New Acid Solution for Texturization of Multicrystalline Silicon Solar Cells

1Department of Systems Design Engineering, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
2Nippon Kasei Chemical Co., Ltd., Onahama, Iwaki, Fukushima 971-8101, Japan

Received 24 July 2013; Accepted 11 September 2013

Academic Editor: Minjoong Yoon

Copyright © 2013 Ryosuke Watanabe et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Surface texturing methods using an alkaline solution for monocrystalline Si (c-Si) solar cells have been widely accepted to improve cell performance. However, multicrystalline Si (mc-Si) cells are difficult to be texturized by alkaline etching, because the grains in the substrates are randomly oriented. In this study, we considered a HF/HNO3/H2SO4 acid solution for texturing the mc-Si cells. We evaluated the morphology of the textured surfaces and the reflectance spectra from the surfaces. The deep dimple textured structures are formed on the surfaces for only 30 seconds of the acid texturing process. This behavior results from the effect of H2SO4 in the solution. This process obtains up to 14.7% conversion efficiencies of the acid textured cells. These conversion efficiencies are up to 1.3 times larger than those of the mirror-etched cells.