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International Journal of Photoenergy
Volume 2014 (2014), Article ID 135725, 5 pages
Research Article

Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

1Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475004, China
2Institute of Physics for Microsystems, Henan University, Kaifeng 475004, China

Received 9 October 2013; Revised 5 February 2014; Accepted 10 February 2014; Published 12 March 2014

Academic Editor: Pramod H. Borse

Copyright © 2014 Guoqiang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.