Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Table 1

Deposition conditions for the i-a-SiO:H films.

Parameters	Values
H2/SiH4	3.3
CO2/SiH4	0–0.5
Plasma frequency	60 MHz
Deposition temperature	180°C
Deposition pressure	300 mTorr
Power density	20 mW/cm^2
Thickness	50 nm