Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique

Table 1

Effective lifetime (𝜏_eff) of samples with various structures measured by SINTON lifetime tester in the transient mode at minority carrier density of 2 × 10¹⁵ cm⁻³.

Sample	Structure	Effective lifetime (ms)
a	n a-Si:H/i a-Si:H on both sides	4.2
b	p a-Si:H/i a-Si:H on both sides	1.5
c	Cell structure	2.1