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International Journal of Photoenergy
Volume 2014, Article ID 425057, 7 pages
http://dx.doi.org/10.1155/2014/425057
Research Article

Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n -Si:H Thin Film Solar Cells

1Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan
2Department of Electrical Information Technology and Communications, Shih Chien University, Kaohsiung Campus, Kaohsiung 84550, Taiwan
3Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81147, Taiwan

Received 10 March 2014; Accepted 11 April 2014; Published 4 May 2014

Academic Editor: Yen-Lin Chen

Copyright © 2014 Fang-Hsing Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • Fang-Hsing Wang, and Tung-Hsin Yang, “Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications,” Thin Solid Films, 2015. View at Publisher · View at Google Scholar