The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors

<table>The surface morphology of the In/Cu-Ga precursor prepared with 120 min of In deposition time.</table>

International Journal of Photoenergy

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Figure 2

Figure 2: The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors 

Figure 2 | The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors 