The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors

<table>XRD patterns of the CIGS films, selenized using different Ar pressures.</table>

International Journal of Photoenergy

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Figure 5

Figure 5: The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors 

Figure 5 | The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors 