Research Article

The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

Table 1

The elemental composition of CIGS films.

Soaking times (min)Compositions (at %)Ratios
CuInGaSeCu/(In + Ga)Ga/(In + Ga)

2023.920.35.949.90.910.22
3023.519.85.950.80.910.22
4023.820.46.049.80.900.22
5024.119.96.149.90.920.23
6023.620.15.850.50.910.22