Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO<sub><b>2</b></sub> AlN/Sapphire Template

<table>(a) Cross-sectional structure of patterned SiO<sub>2</sub> AlN/sapphire template. (b) Tilted SEM image of patterned SiO<sub>2</sub> AlN/sapphire template.</table>

International Journal of Photoenergy

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Figure 1

Figure 1: Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO<sub><b>2</b></sub> AlN/Sapphire Template 

International Journal of Photoenergy

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Figure 1

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO₂ AlN/Sapphire Template