Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO₂ AlN/Sapphire Template

Figure 4

(a) Tilted and (b) cross-sectional SEM images of the sample-R GaN epitaxial layers after Step-1 and Step-2 growth in the IFELOG technology.

(a)

(b)