Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

Table 2

Different parametric values as used in the simulation for p-layer a-Si:H and n-layer a-Si:H of all three solar cell structures.

Parameters	Layers
	p-layer a-Si:H	n-layer a-Si:H
Relative permittivity	11.9	11.9
Band gap (eV)	1.82	1.72
Electron mobility (cm^2/V-s)	10	20
Hole mobility (cm^2/V-s)	1	2
Acceptor/donor concentration (cm^−3)	Acceptor 1×10^19	Donor 1×10^19
Electron affinity (eV)	3.8	3.8
Thickness (nm)	10	10