Effect of Different Deposition Power of In₂O₃ Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

Table 1

Atom ratios of Zn, Ga as a function of deposition power of In₂O₃ target.

In2O3 power	Zn	Ga	In
70 W	7.53	10.53	81.94
80 W	5.83	3.86	90.31
90 W	3.56	3.70	92.74
100 W	2.96	3.60	93.44