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International Journal of Photoenergy
Volume 2014, Article ID 752967, 12 pages
http://dx.doi.org/10.1155/2014/752967
Research Article

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

1Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574
2NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456
3Singulus Technologies AG, Hanauer Landstraße 103, 63796 Kahl Am Main, Germany

Received 28 March 2014; Accepted 11 May 2014; Published 1 June 2014

Academic Editor: Aung Ko Ko Kyaw

Copyright © 2014 Jia Ge et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jia Ge, Muzhi Tang, Johnson Wong, et al., “Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide,” International Journal of Photoenergy, vol. 2014, Article ID 752967, 12 pages, 2014. https://doi.org/10.1155/2014/752967.