Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 5

𝐶_H and 𝑟 as functions of 𝜒_𝑜. 𝐶_H displays a peak at about 10% CO₂ partial pressure, while 𝑟 is insensitive to 𝜒_𝑜 variation. The lines are guides for the eye.