Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 9

𝐶_H and 𝑟 as functions of temperature. The 𝐶_H displays a gradual reduction with a plain over a large span of temperature, resulting in good lifetime with a wide process window. The lines are guides for the eye.