Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Table 1

Plasma parameter variation used in this paper.

Plasma parameter	Value/range
Power	750 W
Deposition time	1–60 s
[SiH4]/[H2]	1
CO2 partial pressure (𝜒𝑜)	0–22%
Temperature	50–400°C