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International Journal of Photoenergy
Volume 2014, Article ID 784857, 6 pages
Research Article

Numerical Simulation of Carbon Nanotubes/GaAs Hybrid PV Devices with AMPS-1D

1Department of Engineering, Ilia Chavchavadze State University, Kutaisi, 4600 Tbilisi, Georgia
2Department of New Technologies, University of Tabriz, Tabriz 51566, Iran

Received 10 October 2013; Revised 9 December 2013; Accepted 25 December 2013; Published 27 March 2014

Academic Editor: Leonardo Palmisano

Copyright © 2014 Georgi Xosrovashvili and Nima E. Gorji. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The performance and characteristics of a hybrid heterojunction single-walled carbon nanotube and GaAs solar cell are modelled and numerically simulated using AMPS-1D device simulation tool. The device physics and performance with different junction parameters are analysed. The results suggest that the open-circuit voltage changes very slightly by changing the electron affinity, acceptor and donor density while the other electrical parameters reach an optimum value. Increasing the concentration of a discrete defect density in the absorber layer decreases the electrical parameters. The current-voltage characteristics, quantum efficiency, band gap, and thickness variation of the photovoltaic response will be quantitatively considered.