Numerical Simulation of Carbon Nanotubes/GaAs Hybrid PV Devices with AMPS-1D

Table 1

The input parameters of AMPS-1D.

Layer properties	SWCNT	GaAs
Thickness (nm)	300	3000
𝜀/𝜀0	3.4	12.85
𝜇𝑒 (cm^2/v·s)	8 × 10^4	3917
𝜇ℎ (cm^2/v·s)	2 × 10^3	239
𝑁𝑑 (cm^−3)	—	2 × 10^15
𝑁𝐴 (cm^−3)	4 × 10^14	—
𝑁𝑐 (cm^−3)	5 × 10^16	4 × 10^18
𝑁𝑣 (cm^−3)	6 × 10^17	8 × 10^17
𝐸𝑔 (ev)	1.10	1.42
𝜒 (ev)	4.27	4.07

𝜇_𝑒,ℎ: electron and hole mobility; 𝑛, 𝑝: donor and acceptor density; 𝑁_𝑐,𝑣: effective density of states in CB and V B; 𝐸_𝑔: bandgap; 𝜒: materials electron affinity; 𝜀, 𝜀₀: the dielectric constants of the material and air.