Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

<table>Light output power as a function of injection current of the InGaN LEDs prepared on the CSS and various cone-shaped PSSs subjected to wet etching from 0 to 10 min.</table>

International Journal of Photoenergy

fig6

Figure 6

Figure 6: Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes 