International Journal of Photoenergy / 2014 / Article / Tab 2

Research Article

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Table 2

Characteristic parameters of simulated InGaN p-i-n solar cell.

Contact type Effective device area (mm2)Grid spacing ( m)Indium (%) (mA/cm2) (V)FF (%) (%)

Square pad0.96125.642.27824.16
Grid pattern
 5 grid fingers0.90180123.262.1783.65.92
 4 grid fingers0.92210123.312.2684.66.34
 3 grid fingers0.94 260123.392.1783.26.12