Research Article
Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
Table 2
Characteristic parameters of simulated InGaN p-i-n solar cell.
| | Contact type |
Effective device area (mm2) | Grid spacing (m) | Indium (%) | (mA/cm2) | (V) | FF (%) | (%) |
| | Square pad | 0.96 | — | 12 | 5.64 | 2.27 | 82 | 4.16 | | Grid pattern | | | | | | | | | 5 grid fingers | 0.90 | 180 | 12 | 3.26 | 2.17 | 83.6 | 5.92 | | 4 grid fingers | 0.92 | 210 | 12 | 3.31 | 2.26 | 84.6 | 6.34 | | 3 grid fingers | 0.94 | 260 | 12 | 3.39 | 2.17 | 83.2 | 6.12 |
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