Research Article

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

Figure 3

RA spectra (upper part) and ΔRAS spectra ( ) for p-type: Zn (blue) and n-type: Si (red) doped Ga0.99In0.01As layers at 600°C growth temperature; energies near the critical points of dielectric function are marked by vertical black lines.
836284.fig.003