Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe₂ Bottom Subcell

Table 1

Material properties for CuIn_1−𝑥Ga_𝑥Se₂ and Ga_𝑥In_1−𝑥P.

Parameter	Model for CuIn1−𝑥Ga𝑥Se2	Model for Ga𝑥In1−𝑥P
𝐸𝑔 (eV)	1.01+0.626𝑥−0.167𝑥(1−𝑥) [24]	1.34+1.44𝑥−0.65𝑥(1−𝑥) [25]
𝜒 (eV)	4.35−0.421𝑥−0.244𝑥^2 [26]	4.38−0.58𝑥 [18]
𝜀𝑟	15.1−5𝑥 [27]	12.5−1.4𝑥 [18]
𝑁𝑐, 𝑁𝑣 (cm^−3)	2.2×10^18, 1.8×10^19 [28]	[29]
𝜇𝑒, 𝜇ℎ (cm^2/Vs)	300, 200 [11]	[30]
𝜏^SRH𝑒, 𝜏^SRHℎ (ns)	3, 3 [31]	20, 20 [32]
𝑛, 𝑘	[33]	[34]