Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2014 (2014), Article ID 952567, 6 pages
http://dx.doi.org/10.1155/2014/952567
Research Article

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

1Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China
2Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan
3Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
4Shanghai Juntech Co. Ltd., 1378 Xingxian Road, Shanghai 201815, China
5Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

Received 16 April 2014; Revised 6 June 2014; Accepted 24 June 2014; Published 10 July 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 Bing Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. C. Jain, M. Willander, J. Narayan, and R. van Overstraeten, “III-nitrides: growth, characterization, and properties,” Journal of Applied Physics, vol. 87, no. 3, pp. 965–1006, 2000. View at Publisher · View at Google Scholar · View at Scopus
  2. S. Nakamura, M. Senoh, S. Nagahame et al., “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices,” Japanese Journal of Applied Physics, vol. 36, no. 12, pp. L1568–L1571, 1997. View at Google Scholar
  3. R. M. Lin, M. J. Lai, L. B. Chang, C. H. Huang, and C. H. Chen, “Effect of trapezoidal-shaped well on efficiency droop in InGaN-based double-heterostructure light-emitting diodes,” International Journal of Photoenergy, vol. 2012, Article ID 917159, 5 pages, 2012. View at Publisher · View at Google Scholar · View at Scopus
  4. T. Erdem, S. Nizamoglu, X. W. Sun, and H. V. Demir, “A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores,” Optics Express, vol. 18, no. 1, pp. 340–347, 2010. View at Publisher · View at Google Scholar · View at Scopus
  5. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, “Characterization of threading dislocations in GaN epitaxial layers,” Applied Physics Letters, vol. 76, no. 23, pp. 3421–3423, 2000. View at Publisher · View at Google Scholar · View at Scopus
  6. S. F. Yu, S. P. Chang, S. J. Chang, R. M. Lin, H. H. Wu, and W. C. Hsu, “Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights,” Journal of Nanomaterials, vol. 2012, Article ID 346915, 6 pages, 2012. View at Publisher · View at Google Scholar · View at Scopus
  7. H. Saijo, J. T. Hsu, R. C. Tu et al., “Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes,” Applied Physics Letters, vol. 84, no. 13, pp. 2271–2273, 2004. View at Publisher · View at Google Scholar · View at Scopus
  8. T. Takeuchi, C. Wetzel, S. Yamaguchi et al., “Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect,” Applied Physics Letters, vol. 73, no. 12, pp. 1691–1693, 1998. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. Lin, K. Ma, C. Hsu et al., “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Applied Physics Letters, vol. 77, no. 19, pp. 2988–2990, 2000. View at Publisher · View at Google Scholar · View at Scopus
  10. S. F. Chichibu, A. Uedono, T. Onuma et al., “Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors,” Nature Materials, vol. 5, no. 10, pp. 810–816, 2006. View at Publisher · View at Google Scholar · View at Scopus
  11. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Applied Physics Letters, vol. 70, no. 8, pp. 981–983, 1997. View at Publisher · View at Google Scholar · View at Scopus
  12. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Applied Physics Letters, vol. 79, no. 2, pp. 215–217, 2001. View at Publisher · View at Google Scholar · View at Scopus
  13. S. Y. Kwon, H. J. Kim, H. Na et al., “Effect of growth interruption on In-rich InGaN/GaN single quantum well structures,” Physica Status Solidi (C), no. 7, pp. 2830–2833, 2003. View at Google Scholar
  14. H. K. Cho, J. Y. Lee, N. Sharma, J. Humphreys, G. M. Yang, and C. S. Kim, “Structural and optical characteristics of InGaN/GaN multiple quantum wells with different growth interruption,” physica Status Solidi (b), vol. 228, no. 1, pp. 165–168, 2001. View at Google Scholar
  15. M. Senthil Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. Hong, and E. Suh, “Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth,” Japanese Journal of Applied Physics, vol. 47, no. 2, pp. 839–842, 2008. View at Publisher · View at Google Scholar · View at Scopus
  16. S. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong, “The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition,” Japanese Journal of Applied Physics, vol. 40, no. 2, pp. L371–L373, 2001. View at Publisher · View at Google Scholar · View at Scopus
  17. Y. B. Tao, Z. Z. Chen, T. J. Yu et al., “Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers,” Journal of Crystal Growth, vol. 318, no. 1, pp. 509–512, 2011. View at Publisher · View at Google Scholar · View at Scopus
  18. S. Feng and J. Chyi, “Carrier transport study of TMIn-treated InGaN LEDs by using quantum efficiency and time-resolved electro-luminescence measurements,” Journal of the Electrochemical Society, vol. 159, no. 3, pp. H225–H229, 2012. View at Publisher · View at Google Scholar · View at Scopus